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lmages are for reference only.
G3S06504C
DIODE SIL CARB 650V 11.5A TO252
Diode 650 V 11.5A Surface Mount TO-252
Please contact sales@vihochips.com
| TYPE | DESCRIPTION |
| Category | Diodes - Rectifiers - Single Diodes |
| Mfr | Global Power Technology-GPT |
| Packaging | Bulk |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 11.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Reverse Recovery Time (trr) | 0 ns |
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | - |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH info available upon request |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| ATTRIBUTE | DESCRIPTION |
| Other Names | G3S06504C-->G3S06504CTB-->G3S06504CINACTIVE-->G3S06504CCT |
| Standard Package | 30 |
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